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Rohm |
Power Transistor 1) Low saturation voltage. (Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 13.1 3.2 10.1 5.08 2.54 (3) (2) (1) 1.24 0.78 !Absolute maximum ratings (Ta = 25°C) Par |
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Rohm |
2SB1616 |
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Rohm |
LSI Assembly ifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoe |
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Rohm |
Schottky Barrier Diode High reliability Small power mold type Super low VF ●Inner Circuit Data sheet ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) Quantity |
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Rohm |
Schottky Barrier Diode 1) Small power mold type (PMDU) 2) High reliability 3) Super low IR 0.9±0.1 3.5±0.2 0.12 2.6±0.1 PMDU lStructure 0.8±0.1 Cathode ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date lConstruction Silicon epitaxial planar type lTaping Dimensions ( |
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Rohm |
PNP -4A -80V Power Transistor 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Outline LPT(S) (D2-PAK) Collector Base Emitter 2SB1644J (SC-83) Datasheet Inner circuit Collector Base Emitter Packaging spec |
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ROHM |
Schottky barrier diode 1) Small power mold type. (PMDS) Dimensions (Unit : mm) 2.6±0.2 for Land size figure (Unit : mm) 2.0 2) Low IR. 3) High reliability d Construction mendigens Silicon epitaxial planer 34 ①② 1.5 ±0.2 0.1±0.02 0.1 2.0±0.2 PMDS Structure RO |
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Rohm |
Silicon PNP Transistor |
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ROHM |
Schottky Barrier Diode 1) Small mold type (TUMD2M) 2) High reliability 3) Super low VF lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17 +0.10 -0.05 1.0±0.10 0.60 +0.20 -0.10 lLand Size Figure (Unit : mm) 1.1 (1) 0.8 0.5 2.0 1.5±0.10 2.0±0.1 2.5±0.2 (2) JEDEC : - |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (TUMD2M) 2) High reliability 3) Low VF 2.0±0.1 2.5±0.2 (2) ROHM : TUMD2M Manufacture date and factory 0.4±0.10 0～0.1 TUMD2M lStructure (1)Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : |
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ROHM |
Schottky Barrier Diode 1) Small mold type (TUMD2M) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17 +0.10 -0.05 1.0±0.10 0.60 +0.20 -0.10 lLand Size Figure (Unit : mm) 1.1 (1) 0.8 0.5 2.0 1.5±0.10 2.0±0.1 2.5±0.2 (2) ROHM : TUM |
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ROHM |
Schottky Barrier Diode 1) Small mold type (TUMD2M) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17 +0.10 -0.05 1.0±0.10 0.60 +0.20 -0.10 lLand Size Figure (Unit : mm) 1.1 (1) 0.8 0.5 2.0 1.5±0.10 2.0±0.1 2.5±0.2 (2) ROHM : TUM |
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ROHM |
Schottky Barrier Diode High reliability Small mold type Super low IR ●Inner Circuit Data sheet ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) Basic Ordering |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode l |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDS) 2) High reliability 3) Super low IR Construction Silicon epitaxial planar type 12 0.1±0.02 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 PMDS |
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Rohm |
Schottky barrier diode 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability Construction Silicon epitaxial planer 2.6±0.2 34 ①② 1.5 ±0.2 0.1±0.02 0.1 2.0±0.2 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 Land size figure (Unit : mm) 2.0 PMDS Structure ROHM : PMDS |
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Rohm |
Schottky barrier diode 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability. 2.6±0.1 3.5±0.2 0～0.1 0.9±0.1 0.8±0.1 PMDU 0.15±0.03 0.8±0.1 0.6 zStructure 0.45 0.6 zConstruction Silicon epitaxial planar ROHM : PMDU JEDEC : SOD-123 ① Manufacture Date z T |
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Rohm |
Transistors 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA 1.5 0.4 3.0 0.5 0.4 Each lead has same dimensions Abbreviated symbol: FL ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89 www.DataSheet4U.com 1.5 1.6 4.5 (1)Base (2)Collecto |
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Rohm |
Schottky barrier diode 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 29±1 3.0±0.2 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) BROWN H2 A BLUE E Symbol S |
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Rohm |
Schottky barrier diode 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 29±1 3.0±0.2 ① ② 8 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) BROWN H2 A BLUE E |
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