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Rohm |
2SB1443 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics. Dimensions (Unit : mm) ATV Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −50 |
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Rohm |
PNP -500mA -50V Digital Transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of |
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Rohm |
2SB1412 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC- |
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Rohm |
PNP Transistor 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. zStructure Epitaxial planar type PNP silicon transistor zExternal dimensions (Unit : mm) 2SB1424 4.5 |
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ROHM Electronics |
2SB1436 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. 2SB1412 1.5±0.3 6.5±0.2 0.2 5.1+ −0.1 C0.5 0.2 2.3+ −0.1 0.5±0.1 0.3 5.5+ −0.1 (1) 0.4±0 |
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Rohm |
Low Frequency Transistor 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC- |
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Rohm |
Power Transistor 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 1.0 0.5 0.5 1.5 2.5 9.5 Parameter Collector-b |
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Rohm |
Power Transistor 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 1.0 0.5 0.5 1.5 2.5 9.5 Parameter Collector-b |
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Rohm |
Power transistor 1)Low saturation voltage, VCE(sat):Max.-500mV at IC/IB=-1/-50mA. 2)Excellent DC current gain characteristics. lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet lApplication LOW FREQUENCY POWER AMPLIFIER lPackaging specifications |
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Rohm |
Transistor 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Un |
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Rohm |
Power Transistor |
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Rohm |
Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of |
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Rohm |
Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of |
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Rohm |
LSI Assembly ifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoe |
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Rohm |
IC Packages account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM s |
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Rohm |
Digital transistors 1) Built-In Biasing Resistors, R1 = R2 = 4.7kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, |
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Rohm |
Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of |
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