Rohm B13 fiche technique

No.	Partie #	Fabricant	Description
1	B1370	ROHM Electronics	2SB1370
2	2SB1370	Rohm	Power Transistor
3	DTB133HK	Rohm	Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic
4	B1357	Rohm	2SB1357 or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buy
5	B1316	ROHM	2SB1316 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltag
6	2SB1331	Rohm	TRANSISTORS
7	B1340	ROHM Electronics	2SB1340 BO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDIT
8	2SB1357	Rohm	PNP Transistor s or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for bu
9	DTB133HS	Rohm	Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic
10	2SB1334	Rohm	Epitaxial Planar PNP Silicon Transistor
11	2SB1326	Rohm	Low Frequency Transistor 1) Low VCE(sat). VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Un
12	2SB1342	Rohm	Power Transistor
13	2SB1329	ROHM	PNP Transistor
14	2SB1330	Rohm	TRANSISTORS
15	2SB1332	Rohm	TRANSISTORS
16	2SB1308	Rohm	Power Transistor from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of
17	2SB1316	Rohm	Power Transistor 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltag
18	2SB1340	Rohm	Power Transistor
19	2SB1386	Rohm	Low Frequency Transistor 1) Low VCE(sat). VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Un
20	2SB1333A	Rohm	TRANSISTORS