| No. | Partie # | Fabricant | Description | Fiche Technique |
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Rohm |
2SK2503 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolu |
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Rohm |
2SK2887 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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Rohm |
Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimens |
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Rohm |
2SK2711 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimens |
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Rohm |
N-Channel MOSFET 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Si |
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Rohm |
Small switching Transistors 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximu |
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ROHM |
2SK2792 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FExternal dimensions (Units: mm) FStructure Silicon N-c |
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Rohm |
Small switching Transistors 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) 1.5±0.3 6.5±0.2 0.2 |
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Rohm |
Switching Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimens |
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Rohm |
Switching Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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Rohm |
2SK2294 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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Rohm |
Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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Rohm |
2SK2504 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. 5.5 1.5 0.9 0.75 0.65 (1)Gate (2)Drain (3)Source 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. 0.5 1.0 |
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Rohm |
2SK2715 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimens |
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Rohm |
Transistors 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Si |
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Rohm |
Small switching Transistors 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolut |
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Rohm |
Switching Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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Rohm |
N-Channel MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. ROHM : VMT3 0.2 1.2 0.8 (2) (3) (1) 0.2 1.2 0.32 0.4 0.4 0.13 0~0 |
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Rohm |
Small switching Transistors 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings |
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Rohm |
Power MOSFET |
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