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Rohm |
2SB1185 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223 Transistors www.DataSheet4U. |
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Rohm |
2SB1443 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics. Dimensions (Unit : mm) ATV Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −50 |
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Rohm |
2SB737 |
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ROHM Electronics |
2SB1370 |
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Rohm |
2SB1243 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type www.DataSheet4U.com PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223 Transist |
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Rohm |
2SB1182 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit: mm) (96-131 |
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Rohm |
2SB1184 O zExternal dimensions W WW .100Y.C M.TW WW 00Y.CO 1) Low W WW .100Y.C M.TW T V CE(sat). . O W OM WW 002SB1243 W.1 .CO 2SB1184 Y.C VCE(sat) = -0.5V (Typ.)WW W Y W .TW W 0 T ± . 1 + 0.2 0 WW .100Y.C M T ± M . .B = -2A / -0.2A) 2.3 −0.1 1 M . 6.5±0.2 O |
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Rohm |
Power Transistor |
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Rohm |
2SB1616 |
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Rohm |
2SB1357 or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buy |
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Rohm |
2SB1064 |
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Rohm |
TRANSISTORS |
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ROHM Electronics |
2SB1340 BO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDIT |
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Rohm |
2SB1412 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC- |
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Rohm |
2SB1238 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter |
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Rohm |
2SB1277 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FExternal dimensions (Unit: mm) FStructure Epitaxial planar type PNP silicon transistor (96-1 |
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Rohm |
2SB1240 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FExternal dimensions (Unit: mm) FStructure Epitaxial planar type PNP silicon transistor (96-1 |
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ROHM |
2SB1316 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltag |
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Rohm |
PNP Transistor s or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for bu |
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Rohm |
2SB1241 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !Structure Epitaxial planar type PNP silicon transistor !External dimensions (Units : mm) 2SB126 |
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