| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Renesas Technology |
(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3 |
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Renesas Technology |
(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3 |
|
|
|
|
Renesas Technology |
(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3 |
|
|
|
|
Renesas Technology |
(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3 |
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