| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas Technology |
2048-word x 8-bit Line Memory • Five modes for various applications • Corresponds to digital TV system with 4 fsc sampling (PAL, NTSC) • Decoder signal output pin (fewer external circuits) • Asynchronous read/write operation — Separate address counters for read/write — No address |
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Renesas Technology |
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
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Renesas Technology |
16M Synchronous Late Write Fast Static RAM • 2.5 V ± 5% operation and 1.5 V (VDDQ) • 16M bit density • Internal self-timed late write • Byte write control (4 byte write selects, one for each 9-bit) • Optional ×18 configuration • HSTL compatible I/O • Programmable impedance output drivers • Di |
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Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
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Renesas Technology |
Wide Temperature Range Version 8 M SRAM • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
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Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
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Renesas Technology |
Wide Temperature Range Version 8 M SRAM • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data inpu |
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