| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas Technology |
Pch Power MOSFET • Drive voltage : 4 V • VDSS : – 150 V www.DataSheet4U.com • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline TO-220S 3 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4 Applic |
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