| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas Technology |
2SK3446 • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D G 1. Source 2. Drain 3. Gate 32 1 S www.DataSheet4U.com Rev.8.00 |
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Renesas Technology |
N-Channel MOSFET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep |
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Renesas Technology |
Silicon N Channel MOS FET • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) |
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Renesas Technology |
2SK215 • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = |
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Renesas Technology |
2SK682 |
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Renesas Technology |
2SK4150 Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) 321 G Absolute Maximum Ratings Item Drain to sourc |
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Renesas Technology |
N-Channel MOSFET |
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Renesas Technology |
Silicon N Channel Power MOS FET • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) 321 G REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 D |
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Renesas Technology |
N-Channel MOSFET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep |
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Renesas Technology |
Silicon N-Channel MOSFET |
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Renesas Technology |
Silicon N Channel MOS FET • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) |
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Renesas Technology |
2SK2725 • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings Outline REJ03G1023-0400 (Previous: ADE-208-452B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM) D G 1. |
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Renesas Technology |
2SK2937 • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S www.DataSheet4U.com R |
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Renesas Technology |
N-Channel MOSFET Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) REJ03G1909-0300 Rev.3.00 May 27, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 3 2 1. S |
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Renesas Technology |
2SK216 • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) |
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Renesas Technology |
Silicon N-Channel MOS FET |
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Renesas Technology |
N-Channel MOSFET |
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Renesas Technology |
Silicon N-Channel MOSFET • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting Outline PLZZ0004CA-A (Previous code : UPAK) D 2 3 G 1 1. Gate 2. Source 3. Drain 4. Source 4 S |
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Renesas Technology |
Slilicon N Channel MOS FET • • • • Low on-resistance R DS(on) = 10 mΩ typ. 4.5 V gate drive device High speed switching External View DPAK-2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain DataSheet 4 U .com www.DataSheet4U.com 2SK3274(L), 2SK3274(S) |
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Renesas Technology |
Silicon N Channel MOS FET www.DataSheet4U.com R • Low on-resistance DS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 1 1. Source 2. Gate 3. Drain |
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