| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas |
High Speed Power Switching MOSFET High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) G 1 2 3 Absolute Max |
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Renesas |
Silicon N-Channel MOSFET • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev |
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Renesas |
High Speed Power Switching MOSFET |
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Renesas |
Silicon N Channel MOS FET • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev |
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Renesas Technology |
Silicon N-Channel MOSFET |
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Renesas |
Silicon N-Channel MOSFET • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev |
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Renesas |
Silicon N-Channel MOSFET • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev |
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