Renesas HZS fiche technique

No.	Partie #	Fabricant	Description
1	HZS7B2L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
2	HZS6A2L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
3	HZS6B1L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
4	HZS-L	Renesas Technology	(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3
5	HZS11A2L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
6	HZS11A3L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
7	HZS12B1L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
8	HZS6A3L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
9	HZS16	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed a
10	HZS11	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed a
11	HZS7	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed a
12	HZS6	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed a
13	HZSxL	Renesas Technology	(HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3
14	HZS33-2L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
15	HZS33-1L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
16	HZS20-3L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
17	HZS22-3L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
18	HZS24-2L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
19	HZS16-1L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr
20	HZS11A1L	Renesas	Silicon Planar Zener Diode • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V thr