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Renesas |
High-Speed Switching Use Nch Power MOS FET • • • • Drive voltage : 10 V VDSS : 300 V rDS(ON) (max) : 0.105 Ω ID : 40 A Outline TO-3P 4 2, 4 1 1. 2. 3. 4. Gate Drain Source Drain 1 2 3 3 Applications Switching mode power supply, plasma display TVs, DC-DC converters, etc. Maximum Ratin |
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