No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas |
CMOS Analog Multiplexers lower signal ON-resistance (<100) and faster transition time (tTRANS < 300ns) compared to the DG506A and DG507A. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG406 series are made possible by u |
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Renesas |
CMOS Analog Switches • ON Resistance (Max) . . . . . . . . . . . . . . . . . . . . . . . . . 85 • Low Power Consumption (PD) . . . . . . . . . . . . . . . <35W • Fast Switching Action - tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns - tOF |
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Renesas |
CMOS Analog Switches • ON-Resistance (Max). . . . . . . . . . . . . . . . . . . . . . . . . 35 • Low Power Consumption (PD) . . . . . . . . . . . . . . . . . . <35µW • Fast Switching Action - tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175ns - |
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Renesas |
CMOS Analog Multiplexers lower signal ON-resistance (<100) and faster transition time (tTRANS < 300ns) compared to the DG506A and DG507A. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG406 series are made possible by u |
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Renesas |
CMOS Analog Switches • ON Resistance (Max) . . . . . . . . . . . . . . . . . . . . . . . . . 85 • Low Power Consumption (PD) . . . . . . . . . . . . . . . <35W • Fast Switching Action - tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns - tOF |
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Renesas |
CMOS Analog Switches • ON-Resistance (Max). . . . . . . . . . . . . . . . . . . . . . . . . 35 • Low Power Consumption (PD) . . . . . . . . . . . . . . . . . . <35µW • Fast Switching Action - tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175ns - |
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Renesas |
CMOS Analog Switches • ON-Resistance (Max). . . . . . . . . . . . . . . . . . . . . . . . . 35 • Low Power Consumption (PD) . . . . . . . . . . . . . . . . . . <35µW • Fast Switching Action - tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175ns - |
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