Renesas D11 fiche technique

No.	Partie #	Fabricant	Description
1	D1133	Renesas	2SD1133 — 60 35 — — — Typ — — — — — — — — 7 Max — — — 1 320 — 1 1 — V V MHz Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A2 I C = 0.1 A2 I C = 2 A, IB = 0.2 A*2 VCE = 4 V, IC
2	RD11S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
3	2SD1138	Renesas	Silicon NPN Transistor — Collector output capacitance Cob — 20 Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test. Max Unit —V —V 1 µA 320 — 3.0 V 1.0 V — pF Test conditions IC = 50 mA, RBE = ∞ IE = 5 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA
4	RD110FM	Renesas	ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil
5	894D115I-04	Renesas	Clock/Data Recovery • Clock recovery for STM-4 (OC-12/STS-12) and STM-1 (OC-3/STS-3) • Input: NRZ data (622.08 or 155.52 Mbit/s) • Output: clock signal (622.08MHz or 155.52MHz) and retimed data signal at 622.08 or 155.52 Mbit/s • Internal PLL for clock generation and cl
6	RD110S	Renesas	ZENER DIODES • Sharp breakdown characteristic • VZ: Applied E24 standard APPLICATIONS Circuit for constant voltage, constant current, wave form clipper, surge absorver, etc. PACKAGE DRAWING (Unit: mm) 2.5±0.15 1.7±0.1 Cathode Indication +0.05 −0.01 0.19 0.9±0.
7	RD110E	Renesas	500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla
8	2SD1126	Renesas	Silicon NPN Transistor ge C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off — — — — 1000 — — — — — — — — — — — — 0.8 — 8.0 Max Unit — V — V 100 µA 10
9	2SD1113	Renesas	Silicon NPN Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t
10	894D115I-01	Renesas	Clock/Data Recovery • Clock recovery for STM-4 (OC-12/STS-12) and STM-1 (OC-3/STS-3) • Input: NRZ data (622.08 or 155.52 Mbit/s) • Output: clock signal (622.08MHz or 155.52MHz) and retimed data signal at 622.08 or 155.52 Mbit/s • Internal PLL for clock generation and cl
11	2SD1137	Renesas	Silicon NPN Transistor ector to emitter saturation VCE (sat) — — voltage Note: 1. Pulse test. Max Unit — V — V 100 µA 50 µA 250 350 1.0 V Test conditions IC = 10 mA, RBE = ∞ IE = 1 mA, IC = 0 VCE = 80 V, RBE = ∞ VEB = 3.5 V, IC = 0 VCE = 4 V IC = 0.5 A*
12	2SD1113K	Renesas	Silicon NPN Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t
13	2SD1101	Renesas	Silicon NPN Transistor BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE Min 25 20 5 — 120 — — Typ — — — — — — — Max — — — 1.0 240 0.5 1.0 Unit V V V µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A IC =
14	RD11FM	Renesas	ZENER DIODES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, whil
15	RD11E	Renesas	500mW PLANAR TYPE SILICON ZENER DIODES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage cla
16	2SD1163	Renesas	Silicon NPN Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t
17	2SD1163A	Renesas	Silicon NPN Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t
18	2SD1164-Z	Renesas	SILICON POWER TRANSISTOR • High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 SYMBOL VCBO VCEO VEBO IC(D
19	2SD1133	Renesas	Silicon NPN Transistor (BR)CEO 50 — — 60 — — V IC = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 ——5 ——V IE = 10 µA, IC = 0 Collector cutoff current ICBO — —1 — —1 µA VCB = 50 V, IE = 0 DC current transfer ratio hFE1*1 60 — 320 60 — 320
20	2SD1134	Renesas	Silicon NPN Transistor (BR)CEO 50 — — 60 — — V IC = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 ——5 ——V IE = 10 µA, IC = 0 Collector cutoff current ICBO — —1 — —1 µA VCB = 50 V, IE = 0 DC current transfer ratio hFE1*1 60 — 320 60 — 320