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Single Power Supply Quad Operational Amplifiers include low-voltage operation, a common-mode input voltage that range from V− (GND) level, an output from a V− (GND) level that is determined by the output stage utilizing class C push-pull circuit with 50 μA(TYP.) constant current, and low current c |
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Dual Operational Amplifier Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.) Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 % (TYP.) Slew Rate 7 V/µs (TYP.) Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.) Input Offset Voltage ±0.3 mV (TY |
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Silicon NPN Transistor |
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SILICON POWER TRANSISTOR low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRA |
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Dual Operational Amplifier • Ultra low-noise (f = 1 kHz): 4.5 nV/√Hz (TYP.) • Total harmonic distortion (f = 20 Hz to 20 kHz): 0.002% (TYP.) • High slew rate : 7 V/μs (TYP.) • High gain bandwidth product (f = 100 kHz) : 15 MHz (TYP.) • Input offset voltage : ±0.3 mV (TYP.) • O |
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Dual Precision Retriggerable/Resettable Monostable Multivibrators both a negative, A, and a positive, B, transition triggered input, either of which can be used as an inhibit input. Also included is a clear input that when taken low resets the one short. The HD74HC4538 is retriggerable. That is, it may be triggered |
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Silicon NPN Transistor Max — 1 1 10 250 1.5 — — 2.5 Unit V µA mA µA — pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f |
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Quad Operational Amplifier include low-voltage operation, a common-mode input voltage that range from V− (GND) level, an output from a V− (GND) level that is determined by the output stage of class C push-pull circuit and a 50 μA(TYP.) constant current, and a low current consu |
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Dual Operational Amplifier Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.) Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 % (TYP.) Slew Rate 7 V/µs (TYP.) Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.) Input Offset Voltage ±0.3 mV (TY |
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Dual Operational Amplifier Equivalent Input Noise Voltage (f = 1 kHz ) 4.5 nV/Hz (TYP.) Total Harmonic Distortion Rate (f = 20 Hz ~ 20 kHz) 0.002 % (TYP.) Slew Rate 7 V/µs (TYP.) Gain Bandwidth Product GBW (f = 100 kHz) 15 MHz (TYP.) Input Offset Voltage ±0.3 mV (TY |
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BCD-to-Seven Segment Latch/Decoder/Driver • High Speed Operation: tpd (A, B, C, D to a – g) = 33 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max |
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Dual Binary Up Counters • High Speed Operation • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA m |
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Dual BCD Up Counters • High Speed Operation • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA m |
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BCD-to-Seven Segment Latch/Decoder/Driver • High Speed Operation: tpd (A, B, C, D to a – g) = 31 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 4 µA max |
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Silicon NPN Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t |
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2SC4552 3C61-XX LSD3C62-XX LSD3C64-XX LSD3C65-XX LSD3C63-XX GaP λP (nm) Vf(v) @ 20mA Min Max 2.8 2.8 2.8 2.4 2.4 2.8 2.8 2.8 2.8 2.4 Iv(mcd) @ 10mA Min 1.5 2.2 2.5 3.5 2.5 1.5 2.2 2.5 3.5 2.5 PIN NO.1 8.0 (0.315") 11.0 (0.433") 2.0X4= 8.0 (0.315") em |
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Silicon NPN Transistor 10 µA, IE = 0 ICBO — — 1 µA VCB = 12 V, IE = 0 ICEO — — 1 µA VCE = 10 V, RBE = ∞ IEBO — — 1 µA VEB = 1 V, IC = 0 hFE 50 120 250 — VCE = 5 V, IC = 20 mA Cob — 1.0 1.5 pF VCB = 5 V, IE = 0, f = 1MHz fT 4.5 6.0 — GHz VCE = |
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Silicon NPN Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t |
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Silicon NPN Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t |
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Silicon NPN Transistor emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage V(BR)EBO ICEO hFE VCE (sat) VCE (sat) Base to emitter saturation voltage VBE (sat) VBE (sa |
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