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Renesas |
2SC2610 off current ICEO — — 1.0 µA VCE = 250 V, RBE = ∞ DC current transfer ratio hFE 30 — 200 VCE = 20 V, IC = 20 mA Collector to emitter saturation voltage VCE(sat) — — 1.5 V IC = 20 mA, IB = 2 mA Gain bandwidth product fT 50 80 — MHz VCE = 20 |
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Renesas |
NPN Transistor • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transistor: 2SA1129 PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RAT |
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Renesas |
Silicon NPN Epitaxial Transistor 35 35 4 — 100 10 — — Typ — — — — — — 0.2 0.64 Max — — — 0.5 320 — 0.6 — V V Unit V V V µA Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 20 V, IC = 0 VCE = 3 V, IC = 10 mA (Pulse test) VCE = 3 V, IC = 500 mA (Pulse tes |
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Renesas |
Silicon NPN Epitaxial Type Transistor V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Min 30 30 5 — — 60 — — — — — Typ — — — — — — — — 230 — 5.0 Max — — — 0.5 0.5 200 1.1 0.75 — 3.5 — Unit V V V µA µA V V MHz pF dB Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µ |
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Renesas |
Silicon NPN Triple Diffused Transistor VCE(sat) fT Cob Min 300 300 5 — 30 — 50 — Typ — — — — — — 80 — Max — — — 1.0 200 1.5 — 4.0 Unit V V V µA V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 mA IC = 20 mA, IB = 2 |
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