Renesas B13 fiche technique

No.	Partie #	Fabricant	Description
1	B1392	Renesas	Silicon PNP Transistor — — voltage Base to emitter saturation VBE(sat) — — voltage Notes: 1. Pulse test. 2. The 2SB1392 is grouped by hFE1 as follows. Max Unit — V — V — V –10 µA –10 200 — –1.0 V –1.0 V –1.2 V Test conditions IC = –10 µA, IE = 0 IC = –50
2	2SB1392	Renesas	Silicon PNP Transistor — — voltage Base to emitter saturation VBE(sat) — — voltage Notes: 1. Pulse test. 2. The 2SB1392 is grouped by hFE1 as follows. Max Unit — V — V — V –10 µA –10 200 — –1.0 V –1.0 V –1.2 V Test conditions IC = –10 µA, IE = 0 IC = –50
3	B1301	Renesas	PNP SIlicon Transistor
4	2SB1301	Renesas	PNP SIlicon Transistor