| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 S |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)- |
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Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 S |
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Renesas Technology |
Silicon P-Channel MOSFET |
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Renesas |
Silicon P-Channel MOSFET • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRS |
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Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 S |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)- |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)- |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)- |
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Renesas |
P-Channel MOSFET • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) D 321 4 G 1. Gate 2. Drain 3. Source 4. D |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.3 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is “ZU –”. 3 G 1 2 REJ03G0869-0300 (Previous: |
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Renesas |
Silicon P-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004 |
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Renesas |
Silicon P-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004AC-A (Package na |
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Renesas |
Silicon P-Channel MOSFET • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRS |
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Renesas Technology |
Silicon P-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 2 3 3 www |
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Renesas |
Silicon P-Channel MOSFET • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S Note: Marking is “ZF –” Rev.2.00, Apr.05.20 |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)- |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)- |
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Renesas |
P-Channel MOSFET • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)- |
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