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2SD1133 — 60 35 — — — Typ — — — — — — — — 7 Max — — — 1 320 — 1 1 — V V MHz Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A*2 I C = 0.1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 4 V, IC |
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Renesas |
Silicon NPN Transistor pt. April 1, 2003 Datasheet pdf - http://www.DataSheet4U.net/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al |
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Renesas |
Silicon NPN epitaxial planer type Transistor • Small size package: MPAK (SC –59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 |
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2SD1000 |
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Renesas Technology |
Silicon NPN Epitaxial Transistor E = 5 V, IC = 1 A*1 IC = 1 A, IB = 0.05 A*1 ICP = 1 A, IB1 = –IB2 = 50 mA*1 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collecto |
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Renesas |
Silicon NPN Transistor — Collector output capacitance Cob — 20 Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test. Max Unit —V —V 1 µA 320 — 3.0 V 1.0 V — pF Test conditions IC = 50 mA, RBE = ∞ IE = 5 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA |
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2SD1001 |
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Renesas |
NPN Transistor • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A) • Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to |
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Renesas |
16-BIT MCU se to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights ari |
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Renesas |
16-BIT MCU se to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights ari |
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Renesas |
Single Diode Ultra Fast Recovery Diode • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = −100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V) R07DS0380EJ0100 Rev.1.00 Apr 26, 2011 Outline RENESAS |
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Renesas |
Silicon NPN Transistor pt. April 1, 2003 Datasheet pdf - http://www.DataSheet4U.net/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al |
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Renesas |
2SD1006 • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance |
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Renesas |
Silicon NPN Epitaxial Transistor |
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Renesas |
NPN Transistor emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD Min 120 120 7 — — 2000 — — — — — (Ta = 25°C) Typ Max Unit Test conditions — |
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Renesas |
16-BIT MCU se to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights ari |
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Renesas |
16-BIT MCU se to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights ari |
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Renesas |
Single Diode Ultra Fast Recovery Diode • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = −100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V) R07DS0379EJ0100 Rev.1.00 Apr 26, 2011 Outline RENESAS |
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Renesas |
Single Diode Fast Recovery Diode • Fast reverse recovery time: trr = 70 ns typ. (at IF = 5 A, di/dt = 100 A/μs) • Low forward voltage: VF = 1.4 V typ. (at IF = 15 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V) R07DS0373EJ0100 Rev.1.00 Apr 26, 2011 Outline RENESAS Package |
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Renesas |
Silicon NPN Epitaxial Transistor • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage E |
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