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Renesas |
HIGH SPEED 2K x 8 DUAL PORT STATIC RAM ◆ High-speed access – Commercial: 20/35/55/100ns (max.) – Industrial: 25/55ns (max.) – Military: 25/35/55/100ns (max.) ◆ Low-power operation – IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.) – IDT7132/42LA Active: 325mW (typ.) Standby: 1mW (typ |
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Renesas Technology |
16-BIT SINGLE-CHIP MICROCOMPUTER • Memory capacity .................................. ROM (See Figure 1.1.4. ROM Expansion) RAM 3K to 20K bytes • Shortest instruction execution time ...... 62.5ns (f(XIN)=16MHZ, VCC=5V) 100ns (f(XIN)=10MHZ, VCC=3V, with software one-wait) : Mask ROM, |
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Renesas |
PNP SILICON EPITAXIAL POWER TRANSISTOR a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost r |
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Renesas Technology |
2SA1084 r voltage www.DataSheet4U.com Gain bandwidth product Collector output capacitance Noise voltage referred to input Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob en 2SA1084 Min Typ Max –90 — — –90 –5 — — 250 — — — — — — — — — — |
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Renesas |
SILICON POWER TRANSISTOR • Complement to 2SC3518-Z 5.5 ±0.2 • Low VCE(sat): VCE(sat) = −0.18 V TYP. 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to base voltage Collector to emitter voltage Base to emitter voltage Collector current (DC) Collector current (pulse) N |
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Renesas |
Silicon PNP Transistor |
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Renesas |
HIGH SPEED 2K x 8 DUAL PORT STATIC RAM ◆ High-speed access – Commercial: 20/35/55/100ns (max.) – Industrial: 25/55ns (max.) – Military: 25/35/55/100ns (max.) ◆ Low-power operation – IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.) – IDT7132/42LA Active: 325mW (typ.) Standby: 1mW (typ |
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Renesas |
Silicon Power Transistor |
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Renesas Technology |
Silicon PNP Transistor Low frequency amplifier REJ03G0643-0100 (Previous ADE-208-1476) Rev.1.00 Aug.10.2005 Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 1 3. Collector 2 *CMPAK is a trademark of Renesas Technology Corp. |
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Renesas Technology |
16-BIT SINGLE-CHIP MICROCOMPUTER • Memory capacity .................................. ROM (See Figure 1.1.4. ROM Expansion) RAM 3K to 20K bytes • Shortest instruction execution time ...... 62.5ns (f(XIN)=16MHZ, VCC=5V) 100ns (f(XIN)=10MHZ, VCC=3V, with software one-wait) : Mask ROM, |
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Renesas |
2SA844 pt. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur w |
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Renesas |
SILICON POWER TRANSISTOR a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWIN |
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Renesas |
SILICON POWER TRANSISTOR a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. ORDERING INFOR |
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Renesas |
Silicon PNP Transistor (BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Min –55 –55 –5 — — 160 — — — — — — Typ — — — — — — –0.1 –0.66 200 2.0 1 0.5 Max — — — –100 –50 500 –0.5 –0.75 — — 5 1 Unit V V V nA nA V V MHz pF dB dB Test conditions IC = –10 µA, IE = 0 IC = – |
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Renesas |
PNP Transistor • Low collector saturation voltage 2SA1069-Z 2SA1069A-Z TO-220SMD (MP-25Z) • Fast switching speed (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector |
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Renesas |
Silicon PNP Epitaxial Transistor |
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Renesas |
Silicon PNP Transistor |
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Renesas |
Silicon PNP Epitaxial Transistor |
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Renesas |
2K x 8 DUAL PORT STATIC RAM ◆ High-speed access – Commercial: 20/35/55/100ns (max.) – Industrial: 25/55ns (max.) – Military: 25/35/55/100ns (max.) ◆ Low-power operation – IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.) – IDT7132/42LA Active: 325mW (typ.) Standby: 1mW (typ |
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Renesas |
Silicon PNP Epitaxial Transistor |
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