No. | Partie # | Fabricant | Description | Fiche Technique |
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NPN Silicon Planar Epitaxial Transistors |
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NPN Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * |
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NPN Silicon Planar Epitaxial Transistors |
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NPN Silicon Planar Epitaxial Transistors VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 10 |
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NPN Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * E |
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NPN Silicon Planar Epitaxial Transistors |
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NPN Silicon Planar Epitaxial Transistors |
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NPN Silicon Planar Epitaxial Transistors VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 10 |
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NPN Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * E |
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NPN Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * |
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PNP Silicon Planar Epitaxial Transistors ON Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA, |
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NPN Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * E |
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PNP Silicon Planar Epitaxial Transistors ON Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA, |
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Silicon PNP Transistor itter Current ICES 9CE=-25V IB=0 Emitter Cutoff Current IEBO 9EB=-4V IC=0 DC Current Gain HFE (1) 9CE=-1V IC=-100mA HFE (2) 9CE=-1V IC=-500mA Collector-Emitter Saturation Voltage VCE(sat) ,C=-500mA IB=-50mA Collector-Base Satura |
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SOT-23 BIPOLAR TRANSISTORS * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plas |
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NPN Silicon Planar Epitaxial Transistors VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 10 |
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NPN Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * |
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PNP Silicon Planar Epitaxial Transistors ON Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA, |
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PNP Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plas |
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PNP Transistor * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -50 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plas |
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