| No. | Partie # | Fabricant | Description | Fiche Technique |
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Rectron |
N-Channel Enhancement Mode Power MOSFET ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dis |
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Rectron |
N-Channel Enhancement Mode Power MOSFET ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dis |
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