| No. | Partie # | Fabricant | Description | Fiche Technique |
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Ramtron International Corporation |
64Kb Bytewide 5V F-RAM Memory 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules • No B |
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Ramtron International Corporation |
Nonvolatile 3V Dual State Saver Nonvolatile State Saver • Logic States Retained in Absence of Power • Outputs Automatically Restored at Power-up • Unlimited Number of State Changes • Max tPD 50ns at 2.7V • Max Frequency 1 MHz Low Power Operation • Supply voltage of 2.7V to 3.6V • 1 |
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Ramtron International Corporation |
Nonvolatile 3V Dual State Saver Nonvolatile State Saver • Logic States Retained in Absence of Power • Outputs Automatically Restored at Power-up • Unlimited Number of State Changes • Max tPD 50ns at 2.7V • Max Frequency 1 MHz Low Power Operation • Supply voltage of 2.7V to 3.6V • 5 |
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Ramtron International Corporation |
Nonvolatile 3V Dual State Saver Nonvolatile State Saver • Logic States Retained in Absence of Power • Outputs Automatically Restored at Power-up • Unlimited Number of State Changes • Max tPD 50ns at 2.7V • Max Frequency 1 MHz Low Power Operation • Supply voltage of 2.7V to 3.6V • 0 |
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Ramtron International Corporation |
Nonvolatile 5V Dual State Saver Nonvolatile State Saver • Logic States Retained in Absence of Power • Outputs Automatically Restored at Power-up • Number of State Changes: 1012 • Max tPD 50ns at 4.5V • Max Frequency 1 MHz Low Power Operation • Supply voltage of 4.5V to 5.5V • 30 µA |
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Ramtron International Corporation |
Nonvolatile 5V Dual State Saver Nonvolatile State Saver • Logic States Retained in Absence of Power • Outputs Automatically Restored at Power-up • Number of State Changes: 1012 • Max tPD 50ns at 4.5V • Max Frequency 1 MHz Low Power Operation • Supply voltage of 4.5V to 5.5V • 15 µA |
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Ramtron International Corporation |
Nonvolatile 3V Dual State Saver Nonvolatile State Saver • Logic States Retained in Absence of Power • Outputs Automatically Restored at Power-up • Unlimited Number of State Changes • Max tPD 50ns at 2.7V • Max Frequency 1 MHz Low Power Operation • Supply voltage of 2.7V to 3.6V • 0 |
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Ramtron |
256Kb Bytewide 5V F-RAM Memory 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules • No |
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Ramtron International |
64Kb Wide Voltage Bytewide F-RAM 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion (1014) Read/Writes • 38 year Data Retention (@ +75C) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules • No |
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Ramtron |
256Kb Wide Voltage Bytewide F-RAM 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules No Battery |
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