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ROHM |
SiC Schottky Barrier Diode 1) Shorter recovery time lOutline TO-220ACG (1) lInner circuit (1) (2) (3) Datasheet 2) Reduced temperature dependence 3) High-speed switching possible ●Applications ・ PFC Boost Topology ・ Secondary Side Rectification ・ Data Center ・ PV Power |
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Rohm |
SCSI active terminator • 1) Internal 2.85V power supply and push-pull operation, for good consistency at all signal levels. 2) Enable pin for terminator enabling and disconnecting, facilitating SCSI network construction. 3) Low power consumption, ideal for energy-saving sy |
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ROHM |
SiC Schottky Barrier Diode 1) Shorter recovery time 650V 15A 23nC TO-220AC (1) (2) (3) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging lConstruction Sili |
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Rohm |
SiC Schottky Barrier Diodes 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage |
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ROHM |
SiC Schottky Barrier Diode 1) Low forward voltage 2) Negligible recovery time/current 3) Temperature independent switching behavior lApplications ・ Switch Mode Power Supply ・ Uninterruptible Power Supply ・ Solar Inverter ・ Motor Drive ・ Air Conditioner ・ EV Charger lAbsolute m |
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ROHM |
SiC Schottky Barrier Diode 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline TO-220AC Datasheet (1) lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) |
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ROHM |
SiC Schottky Barrier Diode 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Construction Silicon carbide epitaxial planer type Outline TO-220AC Datasheet (1) Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) |
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ROHM |
SiC Schottky Barrier Diode 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 2.40 3.00 (1) (2) (3) 20.18 Construction Silicon carbide epitaxial planer type 1.20 5.45 2.03 0.60 ROHM : ＴO-247 (Unit : mm) (1) Anode (2) Cathode |
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ROHM |
SiC Schottky Barrier Diode 1) Low forward voltage lOutline TO-247 TO-247N lInner circuit (1) (2) (3) Datasheet 2) Negligible recovery time/current 3) Temperature independent switching behavior (1) Anode (2) Cathode (3) Anode (1) (2) (3) lApplications ・ Switch Mode Powe |
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ROHM |
SiC Schottky Barrier Diode 1) Shorter recovery time 650V 15A 23nC TO-220FM (1) (2) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) Anode (1) (2) lPackaging specifications Packaging lConstruction Silicon carbide epitaxi |
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ROHM |
SiC Schottky Barrier Diode 1) Shorter recovery time 650V 15A 23nC LPT(L) |
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Rohm |
SiC Schottky Barrier Diodes 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage |
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Rohm |
SiC Schottky Barrier Diode 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1) (1) Cathode (2) Ca |
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Rohm |
SiC Schottky Barrier Diode 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1) (1) Cathode (2) Ca |
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ROHM |
Automotive Grade SiC Schottky Barrier Diode 1) AEC-Q101 qualified lInner circuit 2) Low forward voltage 3) Negligible recovery time/current 4) Temperature independent switching behavior (1) (2) (3) (1) Anode (2) Cathode (3) Anode lApplications ・ On Board Charger lPackaging specifications |
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ROHM |
SiC Schottky Barrier Diode 1) Low forward voltage lInner circuit 2) Negligible recovery time/current 3) Temperature independent switching behavior (1) Anode (2) Cathode (3) Anode (1) (2) (3) lApplications ・ Switch Mode Power Supply lPackaging specifications Package TO-2 |
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ROHM |
Automotive Grade SiC Schottky Barrier Diode 1) AEC-Q101 qualified lInner circuit (1) 2) Low forward voltage 3) Negligible recovery time/current 4) Temperature independent switching behavior (2) (3) (4) (1) Cathode (2) N / C (3) Cathode (4) Anode lApplications ・ On Board Charger lPackagin |
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ROHM |
SiC Schottky Barrier Diode 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Applications ・PFC Boost Topology ・Secondary Side Rectification ・Data Center ・PV Power Conditioners Outline LPT(L) I |
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ROHM |
SiC Schottky Barrier Diode 1) Low forward voltage lInner circuit 2) Negligible recovery time/current 3) Temperature independent switching behavior (1) Anode (2) Cathode (3) Anode lApplications ・ Switch Mode Power Supply ・ Uninterruptible Power Supply ・ Solar Inverter ・ Mot |
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ROHM |
SiC Schottky Barrier Diode 1) Low forward voltage 2) Negligible recovery time/current 3) Temperature independent switching behavior lOutline TO-247 TO-247N lInner circuit Datasheet (1) (2) (3) (1) Anode (2) Cathode (3) Anode lApplications ・ Switch Mode Power Supply ・ Uninte |
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