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ROHM |
Schottky Barrier Diode 1) Power mold type. (CPD3) 2) Low VF 3) High reliability Construction Silicon epitaxial planar 1.6 1.6 CPD 2.3 2.3 Structure (2) Taping dimensions(Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 (1) (3) φ1.55±0.1 0 0.4±0.1 2.5±0.1 TL 10 .1± |
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ROHM |
Schottky Barrier Diode 1)Small power mold type. (PMDS) 2)Low IR 3)High reliability Construction Silicon epitaxial planar 43 ①② 1.5±0.2 0.1±0.02 0.1 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 Manufacture Date PMDS Structure Taping specifications (Unit : mm) 2.0±0.0 |
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ROHM |
Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Super low IR lConstruction Silicon epitaxial planar type 12 1.6 1.6 TO-252 2.3 2.3 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date 2 : Serial number lStructure Ca |
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Rohm |
Schottky Barrier Diodes 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF Structure Silicon epitaxial planer 2.6±0.2 21 ①② 1.5±0.2 0.1±0.02 0.1 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 ① ② year week factory Taping dimensions (Unit : mm) 2.0 0.05 4.0 0.1 4.5 |
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Rohm |
Schottky Barrier Diode 1)Power mold type.(CPD) 2)Low IR 2.0 1.6 1.6 6.0 RB075B40S Electrical characteristic curves Data Sheet 10 1000000 Ta=150 C Ta=125 C 10000 Ta=125 C 1 10000 1000 Ta=75 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I |
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ROHM |
Schottky Barrier Diode High reliability Small power mold type Low VF ●Inner Circuit ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) 12 Quantity(pcs) 3000 |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDS) 2) High reliability 3) Super low IR 12 1.5±0.2 0.1±0.02 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type 2.0±0.05 4.0±0.1 PMD |
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ROHM |
Schottky Barrier Diode 1) Small power mold type.(PMDS) 2) Ultra low IR 3) High reliability 99 12 1.5±0.2 0.1±0.02 0.1 2.0±0.2 PMDS Structure ROHM : PMDS JEDEC :SOD-106 1 2 Manufacture Date Construction Silicon epitaxial planar Taping specifications (Unit : mm) |
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ROHM |
Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF lConstruction Silicon epitaxial planar type 12 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date 2 : Serial number lTaping specifications (Unit : mm) 1.6 1.6 T |
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ROHM |
Schottky Barrier Diode 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer 6 Data Sheet Structure (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Reverse voltage (repetitive) Reverse voltage( |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) Low IR 3) High reliability 4) AEC-Q101 qualified (Limited to HR Type) Construction Silicon epitaxial planar External dimensions (Unit : mm) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 1 1.2 1.3 0.8 (1) (2) (3 |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) Low IR 3) High reliability 4) AEC-Q101 qualified (Limited to HR Type) External dimensions (Unit : mm) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 1 1.2 Datasheet AEC-Q101 Qualified Structure (2) (1) (3) (1) |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDU) 2) High reliability 3) Super low IR Construction Silicon epitaxial planar type PMDU 0.9±0.1 ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date 0.8±0.1 Structure Taping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDU) 2) High reliability 3) Super low IR Construction Silicon epitaxial planar type PMDU 0.9±0.1 ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date 0.8±0.1 Structure Taping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ |
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ROHM |
Schottky Barrier Diode High reliability Small power mold type Super low IR ●Inner Circuit Data sheet ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) Quantity |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Super low IR Dimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 (2) 1.50±0.20 0.95±0.10 3.70±0.20 4.70±0.14 1.4 4.4 Datasheet AEC-Q101 Qualified Land Size Figure (Unit : mm) 2.0 PMDT |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode l |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode l |
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ROHM |
Schottky Barrier Diode High reliability Small power mold type Super low IR ●Inner Circuit Data sheet ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) Quantity |
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ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode l |
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