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ROHM |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant lOutline TO-252 SC-63 CPT3 lInner circuit lPackaging specifications Packing Embossed Tape Ree |
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ROHM |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lOutline TO-263S SC-83 LPT(S) lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 |
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ROHM |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant 5) AEC-Q101 qualified lOutline TO-263S SC-83 LPT(S) lInner circuit lPackaging specifications Packing Embossed Tape Reel size ( |
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ROHM |
Power MOSFET 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackage TO-252 lInner circuit Datasheet lApplication Switching lMarking specification Marking R8003KND3 lAbsolute maximum ra |
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ROHM |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant 5) AEC-Q101 qualified lOutline TO-263S SC-83 LPT(S) lInner circuit lPackaging specifications Packing Embossed Tape Reel size ( |
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ROHM |
Power MOSFET 1) Low on-resistance. 800V 2.08 5A 51W Outline TO-220FM Inner circuit (1) (2) (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) 5) Parallel use is easy. ∗1 (2) (3) (1) G |
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ROHM |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S) lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 |
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ROHM |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Packing Em |
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ROHM |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant lOutline TO-252 SC-63 CPT3 lInner circuit lPackaging specifications Packing Embossed Tape Ree |
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Rohm |
Power MOSFET 1) Low on-resistance. 800V 4.3 2A 36W Outline TO-220FM Inner circuit (1) (2) (3) (2) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) (1) Gate (2) Drain *1 (3) Source *1 Body |
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Rohm |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing |
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ROHM |
Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Pb-free plating ; RoHS compliant 5) AEC-Q101 qualified 6) lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switchin |
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ROHM |
Power MOSFET 1) Low on-resistance. 10A 40W lInner circuit (1) (2) (3) for 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. d 4) Drive circuits can be simple. e 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 BODY DIODE |
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