| No. | Partie # | Fabricant | Description | Fiche Technique |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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Rohm |
Transistors 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions ( |
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Rohm |
Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimens |
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Rohm |
2SK2711 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimens |
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ROHM |
2SK2792 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FExternal dimensions (Units: mm) FStructure Silicon N-c |
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Rohm |
Switching Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimens |
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Rohm |
2SK2715 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimens |
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Rohm |
Switching Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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Rohm |
CMOS Voltage Detector ◼ High accuracy detection ◼ Ultra-low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Wide Operating temperature range ◼ Very small and low height package ◼ Package SSOP5 is similar to SOT-23-5 (JEDEC) ◼ Package SSOP3 is sim |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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Rohm |
Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FEquivalent |
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Rohm |
Switching Transistors 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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Rohm |
Switching Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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Rohm |
CMOS Voltage Detector ◼ High accuracy detection ◼ Ultra-low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Wide Operating temperature range ◼ Very small and low height package ◼ Package SSOP5 is similar to SOT-23-5 (JEDEC) ◼ Package SSOP3 is sim |
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Rohm |
Transistor 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (U |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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