| No. | Partie # | Fabricant | Description | Fiche Technique |
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ROHM Electronics |
2SD1760 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD18 |
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ROHM Electronics |
2SD1764 |
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ROHM Electronics |
2SD1781K 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K.. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) FAbsolute maxi |
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