ROHM BSM fiche technique

No.	Partie #	Fabricant	Description
1	BSM120C12P2C201	ROHM	SiC 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram Datasheet 1 10(N.C) 9 8(N.C) 3,4 5 6 7(N.C) 2 *Do not connect anything to NC pin. Construction This product is a chopper mo
2	BSM120D12P2C005	ROHM	SiC 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram Datasheet 1 10 9 8(N.C) 3,4 5 6 7(N.C) 2 *Do not connnect to NC pin. Construction This product is a half bridge module cons
3	BSM180D12P3C007	ROHM	SiC 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram 1 10 9 8(N.C) 3,4 5 6 7(N.C) 2 *Do not connnect to NC pin. Construction This product is a half bridge module consisting of
4	BSM180C12P2E202	ROHM	SiC 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.co
5	BSM080D12P2C008	ROHM	SiC 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram Datasheet 1 10 9 8(N.C) 3,4 5 6 7(N.C) 2 *Do not connnect to NC pin. Construction This product is a half bridge module cons
6	BSM180D12P2C101	ROHM	SiC 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram 1 10 9 8(N.C) 3,4 5 6 7(N.C) 2 *Do not connnect to NC pin. Construction This product is a half bridge module consisting of
7	BSM600D12P3G001	ROHM	SiC Power Module 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. 6 5 10 NTC 11 Datasheet 1 3,4 2 Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions &
8	BSM300D12P2E001	ROHM	SiC 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram 7 9 8 6 5 10 NTC 11 1 3,4 2 Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
9	BSM250D17P2E004	ROHM	SiC Power Module 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. 6 5 10 NTC 11 Datasheet 1 3,4 2 Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions &
10	BSM300D12P3E005	ROHM	SiC Power Module 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. 6 5 10 NTC 11 Datasheet 1 3,4 2 Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions &
11	BSM400D12P2G003	ROHM	SiC Power Module 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. 6 5 10 NTC 11 Datasheet 1 3,4 2 Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions &