| No. | Partie # | Fabricant | Description | Fiche Technique |
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Rohm |
2SD1944 |
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ROHM Electronics |
2SD1760 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD18 |
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Rohm |
NPN Transistor |
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ROHM |
NPN Transistor |
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ROHM |
2SD2422 |
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Rohm |
2SD1918 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V 4) Lead Free/RoHS Compliant. lOutline CPT3 Collector Base Emitter 2SD1918 (SC-63) |
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Rohm |
2SD2144 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96 |
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Rohm |
Power Transistor |
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ROHM Electronics |
2SD1292 |
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Rohm |
2SD2118 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 |
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ROHM |
NPN Transistor |
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Rohm |
Power Transistor 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1864 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) |
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Rohm |
Power Transistor |
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Rohm |
2SD1761 |
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Rohm |
2SD2096 s or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for bu |
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Rohm |
High-current gain Power Transistor |
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Rohm |
High-current Gain Medium Power Transistor 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96 |
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Rohm |
High-current Gain Medium Power Transistor 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96 |
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Rohm |
Transistor 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units |
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Rohm |
Low Frequency Transistor |
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