| No. | Partie # | Fabricant | Description | Fiche Technique |
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Xiamen Faratronic |
Box-type Metallized Polypropylene Film Interference Suppression Capacitor ● metallized polypropylene structure ● Withstanding overvoltage stressing ● Plastic case (UL94 V-0), Epoxy resin sealing. ● Widely used in interference suppression circuit ■ Safety Approvals ● ● CQC GB/T 14472-1998, 275/305VAC,0.0010μF∼10.0μF Certif |
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ETC |
Metallized polypropylene film Interference Suppression capacitor %Ï metallized polypropylene structure %Ï Withstanding overvoltage stressing %Ï Excellent active and passive flame resistant abilities %Ï Widely used in across-the-line,interference suppression circuit,etc. % [‰Qh‹¤‹ÁS sl A a v o r p y t e f a %Ï C Q |
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Mixinno |
2 x 3W FM Non-Interference Class-D Amplifier shutdown and mute controls functions. High PSRR and differential architecture provide increased immunity to noise and RF rectification. Features Low EMI Emission FM Non-Interference Filterless Class-D Architecture Output Power - 3.2W/ch into |
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InterFET |
P-Channel JFET • InterFET P0032F Geometry • Typical Noise: 10 nV/√Hz • Low Ciss: 3.2pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Choppers • Data Switches • Commutators Description The 20V InterFET 2N3330 and 2N3331 are targete |
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RFE |
METAL OXIDE VARISTOR |
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RFE |
Metal Oxide Varistor 14mm Dusc VR-14N151K 95 125 150 135 - 165 250 4500 2,500 0.6 44.0 3,000 ü ü JVR-14N181K 115 150 180 162 - 198 300 4500 2,500 0.6 52.0 970 ü ü JVR-14N201K 130 170 200 185 - 225 340 4500 2,500 0.6 57.0 840 ü ü JVR-14N221K 140 180 220 198 - 242 360 4500 |
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InterFET |
N-Channel JFET • InterFET N0014EU Geometry • Low Noise: 5 nV/√Hz Typical • Low Leakage: 2pA Typical • Low Ciss: 2.3pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Hearing Aids • Mini Microphones • Infrared Detector Amplifiers • B |
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RFE |
METAL OXIDE VARISTOR 2 200 240 216 - 264 225 270 247 - 303 250 300 270 - 390 275 330 297 - 363 300 360 324 - 396 320 390 351 - 429 350 430 387 - 473 385 470 423 - 517 418 510 459 - 561 460 560 504 - 161 505 620 558 - 682 560 680 612 - 748 615 750 675 - 825 640 780 702 - |
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IXYS Corporation |
PolarHV HiPerFET Power MOSFET D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. T |
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InterFET |
N-Channel JFET • InterFET N0016H Geometry • InterFET N0032H Geometry (2N3458) • Low Noise: 5 nV/√Hz Typical • High Gain: 7.5mS Typical (2N3458) • Low Cutoff Voltage: 2N3460 < 1.8V • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • General Purp |
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InterFET Corporation |
Dual Matched N-Channel JFET • InterFET N0450H Geometry • Low Noise: 1.1 nV/√Hz Typical • High Gain: 30mS Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Low-Noise Audio Amplifier • Differential Amplifier • Replacement for Japanese 2SK146 Descrip |
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IXYS Corporation |
HiPerFET Power MOSFETs l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifie |
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Fairchild Semiconductor |
Ultra FRFET MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better swit |
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InterFET |
N-Channel JFET • InterFET N0026S Geometry • Low Noise: 4 nV/√Hz Typical • Low Ciss: 4.3pF Typical • Low Leakage: 10pA Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • VHF/UHF Amplifiers Description The -25V InterFET 2N5484, 2N5485, a |
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RFE |
BRIDGE RECTIFIER • UL Recognized • Current 25 Amps • Voltage Range 50V ~ 1000V • Glass passivated chip junction • High surge forward current capability • GBJ available in 6A, 8A, 10A, 15A, 20A, 25A, 35A and 50A MECHANICAL DATA • Molded plastic body (UL 94V-0 rated) • |
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RFE |
METAL OXIDE VARISTOR |
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RFE |
METAL OXIDE VARISTOR |
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IXYS Corporation |
HiPerFET Power MOSFET · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching ( |
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RFE |
BRIDGE RECTIFIER • UL Recognized • Current 1.5 Amps • Voltage Range 50V ~ 1000V • Glass passivated chip junction • Low forward voltage drop, high current capability • Available in 1.0Amp, 1.5Amps and 2.0Amps No Suffix MECHANICAL DATA • Molded plastic body (UL 94V-0 |
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InterFET |
N-Channel MOSFET • InterFET N0016SH Geometry • Low Noise: 5 nV/√Hz Typical • Low Ciss: 4pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Audio Amplifiers • Small Signal Amplifier • Ultrahigh Impedance Pre-Amplifier • Description The |
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