| No. | Partie # | Fabricant | Description | Fiche Technique |
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RF Micro Devices |
GaAs HBT 2-Stage Power Amplifier ■ High Gain 20.5dB at 2.14GHz ■ High Linearity, OIP3 = 47.5dBm at 2.14GHz ■ Off-chip Interstage for Design Flexibility ■ Independent Bias Control for Each Stage ■ Power-down Capability ■ 700MHz to 2700MHz Operation Applications ■ GaAs Driver for Base |
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Fujitsu Media Devices |
STANDARD Micro Controller Specification USB Interface Controller Chip Input Panel Panel Drive change over switch MCU Control Section A/D converter USB Interface Noise Filter • • • • High quality and reliability touch panel controller USB 1.1 Interface Used to control the 4-Wire resistive touch panels RoHS complian |
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Advanced Micro Devices |
QUAD THREE STATE BUS TRANSCEIVER WITH INTERFACE LOGIC |
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RF Micro Devices |
3-Stage Power Amplifier Module ■ WCDMA Power at 2140MHz = 24dBm with -45dBc ACPR ■ Flexible External Matching for Band Selection ■ Gain = 38dB at 2140MHz ■ P1dB = 33dBm at 2140MHz ■ 5V Supply ■ Independent Bias Control for Each Stage ■ Power-down Capability ■ Integrated Power Dete |
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RF Micro Devices |
GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER Low Noise Figure=0.80dB at 2.0 GHz Gain=24.5dB at 2.0GHz OIP3=39dBm at 2.0GHz Excellent Return Loss: S11>20dB, S22>20dB at 2.0 GHz P1dB=22.4dBm at 2.0GHz Single-Supply Operation: 5V at Idq = 120 mA Flexible Biasing Options: 3-5V, Adjust |
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RF Micro Devices |
general purpose class A linear amplifier Linear Class A Performance P1dB=17.5dBm at 3.5GHz P1dB=15dBm at 5.9GHz IP3=30dBm at 3.5GHz IP3=27dBm at 5.9GHz Power Up/Down Control<1uS Active Bias Controlled Robust Class 1C ESD Rating Applications Driver Stage for 802.11a Access |
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RF Micro Devices |
Single-Stage Power Amplifier WCDMA Power at 2140MHz = 20dBm with -60dBc ACPR Gain = 13dB at 2140MHz P1dB = 32.5dBm at 2140MHz Externally Matched Power-down capability Class 1C HBM ESD Rating On-chip Input Power Detector Applications 2G, 3G, and 4G Air Interfaces |
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RF Micro Devices |
Single-Stage Power Amplifier WCDMA Power at 2140MHz = 17dBm with -60dBc ACPR Gain = 14dB at 2140MHz P1dB = 30dBm at 2140MHz Externally Matched Power-down Capability Class 1C HBM ESD Rating On-chip Input Power Detector Applications 2G, 3G, and 4G Air Interfaces |
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RF Micro Devices |
3-stage HBT power amplifier module ■ WCDMA Power at 2140MHz = 21dBm with -45dBc ACPR ■ Flexible External Matching for Band Selection ■ Gain = 36dB at 2140MHz ■ P1dB = 31dBm at 2140MHz ■ 5V Supply ■ Independent Bias Control for Each Stage ■ Power-down Capability ■ Integrated Power Dete |
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