| No. | Partie # | Fabricant | Description | Fiche Technique |
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RF Micro Devices |
GaAs pHEMT LOW NOISE MMIC AMPLIFIER Ultra-Low Noise Figure=0.60dB at 900MHz Gain=18.9dB at 900MHz High Linearity: OIP3=40.5dBm at 1900MHz Channel Power=13.4dBm (- 65dBc IS95 ACPR, 880MHz) P1dB=23.4dBm at 1900MHz Single-Supply Operation: 5V at IDQ = 90 mA Flexible Biasing |
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RF Micro Devices |
GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER Low Noise Figure=0.80dB at 2.0 GHz Gain=24.5dB at 2.0GHz OIP3=39dBm at 2.0GHz Excellent Return Loss: S11>20dB, S22>20dB at 2.0 GHz P1dB=22.4dBm at 2.0GHz Single-Supply Operation: 5V at Idq = 120 mA Flexible Biasing Options: 3-5V, Adjust |
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