| No. | Partie # | Fabricant | Description | Fiche Technique |
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RF Micro Devices |
DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER High Reliability SiGe HBT Technology Robust Class 1C ESD P1dB = 6.9dBm at 1950MHz IP3 = 18.0dBm at 1950MHz Die Size: 0.75mm x 0.70mm Applications LO Buffer Amp RF Pre-driver and RF Receive Path Military Communications Test and Instr |
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RF Micro Devices |
DC to 4GHZ ACTIVE BIAS GAIN BLOCK a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB2433Z product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 and an ex |
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RF Micro Devices |
DC to 3.5GHz ACTIVE BIAS GAIN BLOCK a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6433 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an e |
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RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB-2233 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an |
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RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB-2233 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an |
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RF Micro Devices |
DC to 3.5GHz ACTIVE BIAS GAIN BLOCK a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6433 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an e |
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