| No. | Partie # | Fabricant | Description | Fiche Technique |
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RF Micro Devices |
DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE GND 1 22 21 20 19 Enhanced Performance Transmit Module No External Routing High Efficiency at rated POUT VBATT =3.5V GSM850 42% PCS1900 38% Low RX Insertion Loss Symmetrical RX Ports 0dBm to 6dBm Drive Level, >50dB of Dyn |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE • Reduced Solution Size Integrating Antenna Switch and Harmonic Filtering to Decrease Time to Market • Package 7x8x1.2mm • IEC 61000-4-2 Compliant • In/Output Matched to 50 Ω • DC Block on Antenna Port • GSM850/900 POUT =33.5dBm • DCS/PCS POUT =30.5d |
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RF Micro Devices |
DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE GND 1 22 21 20 Applications 3V Dual-Band GSM/GPRS Handsets GSM900/DCS1800 Products GPRS Class 12 Compliant Portable Battery-Powered Equipment CO NF ID EN TI AL :N DA Enhanced Performance Transmit Module No Extern |
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RF Micro Devices |
3V W-CDMA BAND 2 LINEAR PA MODULE HSDPA and HSPA+ Compliant Low Voltage Positive Bias Supply (3.0V to 4.35V) +28.5dBm Linear Output Power (+27.0dBm HSDPA and HSPA+) High Efficiency Operation 39% at POUT=+28.5dBm 19% at POUT=+19.0dBm (Without DC/DC Converter) Low Quiescent C |
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RF Micro Devices |
3V W-CDMA BAND 8 LINEAR PA MODULE HSDPA and HSPA+ Compliant Low Voltage Positive Bias Supply (3.0V to 4.35V) +28.5dBm Linear Output Power (+27.0dBm HSDPA) High Efficiency Operation 41% at POUT=+28.5dBm 22% at POUT=+18.0dBm 11% at POUT=+10.0dBm Low Quiescent Current in Low P |
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RF Micro Devices |
3V LTE/UMTS/CDMA BAND 3 LINEAR PA MODULE Multi-Mode LTE/UMTS/CDMA LTE/UMTS Bands 3, 4, 9, and 10 CDMA Band Class 15 LTE PA Efficiency 38%, +28dBm Best-in-Class Current Consumption Optimized use with DC-DC converter Operation Three Power States with Digital Control Interface |
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RF Micro Devices |
3V WCDMA BAND 3 LINEAR PA MODULE HSDPA/HSUPA/HSPA+/LTE High Efficiency WCDMA Operation: 41% at POUT=+28dBm Low Voltage Positive Bias Supply (3.0V to 4.2V) Internal Voltage Regulator No External (VREF) Required Two Mode Power/Gain States with Digital Control Interface Int |
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RF Micro Devices |
3V W-CDMA BAND 2 LINEAR PA MODULE HSDPA and HSPA+ Compliant Low Voltage Positive Bias Supply (3.0V to 4.35V) +28.5dBm Linear Output Power (+27.0dBm HSDPA and HSPA+) High Efficiency Operation 39% at POUT=+28.5dBm 19% at POUT=+19.0dBm (Without DC/DC Converter) Low Quiescent C |
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RF Micro Devices |
3V W-CDMA BAND 5 LINEAR PA MODULE HSDPA and HSPA+ Compliant Low Voltage Positive Bias Supply (3.0V to 4.35V) +28.0dBm Linear Output Power (+26.5dBm HSDPA) High Efficiency Operation 41% at POUT=+28.0dBm 22% at POUT=+18.0dBm 11% at POUT=+10.0dBm Low Quiescent Current in Low P |
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RF Micro Devices |
3V TD-SCDMA/W-CDMA LINEAR PA MODULE TD-SCDMA and HSDPA Compliant Low Voltage Positive Bias Supply (3.4V to 4.2V) +28dBm Linear Output Power W-CDMA (+26.5dBm HSDPA) +27.5dBm Output Power TD-SCDMA High Efficiency Operation 35% at POUT=+27.5dBm (TD-SCDMA) 20% at POUT=+19.0dBm |
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RF Micro Devices |
3V CDMA/WCDMA BAND 2 LINEAR PA MODULE Multi-mode UMTS/CDMA/ EV-DO Best-in-Class Efficiency +28.5 dBm, PAE 44%, WCDMA +28.25 dBm, PAE 42%, CDMA 2K RC1 High Coupler Directivity 22dB Internal Voltage Regulator 3-Mode Power States with Digital Control Interface Optimized for |
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RF Micro Devices |
3V LTE BAND 17 LINEAR PA MODULE Fully Compliant to LTE Modulation Best-in-Class Efficiency 44%, +28dBm Output Power High Power Gain: 32dB E-UTRA ACLR: -38dBc UTRA ACLR: -39dBc 5 MHz LTE Channel - Up to 25 Resource Blocks (RB) 10 MHz LTE Channel - Up to 50 Resource Blo |
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RF Micro Devices |
3V LTE Band 20 Linear PA Module LTE Band 20 Best-in-Class LTE Efficiency 41%, +27.5 dBm output power (MPR=0) High Power Gain: 30dB Optimized using DC-DC converter Operation: RF6650 recommended Three Power States with Digital Control Interface Integrated Power Coupler |
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RF Micro Devices |
3V W-CDMA BAND 1 LINEAR PA MODULE HSDPA Compliant Low Voltage Positive Bias Supply (3.0V to 4.2V) +28.0dBm Linear Output Power (+26.5dBm HSDPA) High Efficiency Operation 40% at POUT=+28.0dBm Internal Voltage Regulator Eliminates the Need for External Reference Voltage (VREF |
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RF Micro Devices |
3V WCDMA BAND 1 LINEAR PA MODULE HSDPA/HSUPA/HSPA+/ LTE High Efficiency WCDMA Operation : 42.5% at POUT = +28dBm Low Voltage Positive Bias Supply (3.0V to 4.2V) Internal Voltage Regulator No External (VREF) Required Two Mode Power/Gain Stages with Digital Control Interface |
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