| No. | Partie # | Fabricant | Description | Fiche Technique |
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RCA |
Power Transistors • Maximum safe-area-of-operation curves • Low saturation voltages • High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838) • High dissipation rating PT = 100W !< z ~S! ~" ~ (IlCZ:~ a~~ .......~~ ~~ t~il ." . ."~. .00ou.!: |
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RCA |
Silicon NPN & PNP Transistor |
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RCA |
Silicon NPN & PNP Transistor |
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RCA |
Power Transistors • Low thermal resistance: 8J-C = 1.SoC/W max. • Low saturation voltage • High second breakdown ratings for both forward · and reverse ·bias operation • High peak collector current ratings • Maximum ·area-of ·operation curves for DC and pulse operation |
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RCA |
Thyristors • di/dt Capability = 150 A/Ils • Shorted ·Emitter Center ·Gate Design • Low Switching Losses • Low On ·State Voltage at High Current Levels • Low Thermal Resistance ~e 200 V Package Type, 400 V Types 600 V Types Press-Fit 2N5571 (T410Q ·SeriesJ |
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RCA |
RF Power Transistor |
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RCA |
Silicon NPN & PNP Transistor |
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RCA |
Thyristors a 25/40 rnA IGT " ShDrted ·Emitter, Center ·Gate Design .. LDw Switching LDsses " LDw On-State VDltage at High Current Levels 2N5754 2N5756 2N5755 2N5757 T2303 Series T2313 Series H-1468 ~Package Modified TO-5 (T2303 Series) Modified TO-5 with Hea |
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RCA |
Thyristors • di/dt Capability = 150 A/Ils • Shorted ·Emitter Center ·Gate Design • Low Switching Losses • Low On ·State Voltage at High Current Levels • Low Thermal Resistance ~e 200 V Package Type, 400 V Types 600 V Types Press-Fit 2N5571 (T410Q ·SeriesJ |
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RCA |
Power Transistors • Low saturation voltage- VeE(sat) = 1 V max. at Ie = 2 A (2N5490, 2N5491) = 1 V max. at Ie = 2.5 A (2N5492, 2N5493) = 1 V max. at Ie = 3 A (2N5494, 2N5495) = 1 V max. at Ie = 3.5 A (2N5496, 2N5497) • VERSAWATT package (molded silicone plastic) o Max |
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RCA |
Power Transistors • Maximum safe-area-of-operation curves • Low saturation voltages • High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838) • High dissipation rating PT = 100W !< z ~S! ~" ~ (IlCZ:~ a~~ .......~~ ~~ t~il ." . ."~. .00ou.!: |
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RCA |
Power Transistors • Maximum safe-area-of-operation curves • Low saturation voltages • High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838) • High dissipation rating PT = 100W !< z ~S! ~" ~ (IlCZ:~ a~~ .......~~ ~~ t~il ." . ."~. .00ou.!: |
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RCA |
Power Transistors JEDEC TO-3 .. Power dissipation (PT) = 110 W at SO V • High-voltage ratings: VCEO(sus) = 300 V max. (2NS80S) = 22S V max: (2NS804) a Maximum-operating-area curves. .for selection of maximum operating conditions for operation free from second break |
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RCA |
Silicon NPN & PNP Transistor |
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RCA |
Silicon NPN & PNP Transistor |
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RCA |
Power Transistors o Low saturation voltage- YeE(sat) = 1 Y max. at Ie = 0.5 A (21'15293, 21'15294) = 1 Y max. at Ie = 1 A (21'15295, 21'15296) = 1 Y max. at Ie =' 1.5 A (21'15297, 21'15298) 0YERSAWATT package (molded-silicone plastic) o Maximum safe-area-of-operation |
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RCA |
Power Transistors "Modified TO-ag" • Fast switching at lA: ton = 30 ns max. toft.= 60 ns max. • High voltage ~tings • High..power.....ipation . •atings • High dc beta at lA - 25 min. • Low saturation voltage at 1 A: 0.5 V typo • Maximum ·area-af-operation curves for |
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RCA |
Power Transistors • Low thermal resistance: 8J-C = 1.SoC/W max. • Low saturation voltage • High second breakdown ratings for both forward · and reverse ·bias operation • High peak collector current ratings • Maximum ·area-of ·operation curves for DC and pulse operation |
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RCA |
Power Transistors • Low thermal resistance: 8J-C = 1.SoC/W max. • Low saturation voltage • High second breakdown ratings for both forward · and reverse ·bias operation • High peak collector current ratings • Maximum ·area-of ·operation curves for DC and pulse operation |
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RCA |
Thyristors a 25/40 rnA IGT " ShDrted ·Emitter, Center ·Gate Design .. LDw Switching LDsses " LDw On-State VDltage at High Current Levels 2N5754 2N5756 2N5755 2N5757 T2303 Series T2313 Series H-1468 ~Package Modified TO-5 (T2303 Series) Modified TO-5 with Hea |
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