| No. | Partie # | Fabricant | Description | Fiche Technique |
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RCA |
Power Transistors a Maximum-area-of-operation curves for de and pulse operation a Rated for safe operation in both forward- and reverse-bias conditions " High sustaining voltage a Total saturated transition time less than 1 p.s for 2N3879, 2N5202, and 2N6500 RCA-2N3 |
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RCA |
Thyristors " Fast turn-off time - 10 j1s max. CI Center gate construction ... provides " High di/dt and dv/dt capabilities rapid uniform gate-current spreading for " Shorted-emitter gate-cathode construction faster turn-on with substantially reduced ___ c |
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RCA |
Thyristors o Fast turn ·off time -1511s max. o High di/dt and dv/dt capabilities o High peak.current capability o Shorted ·emitter gate.cathode construction o Forward and reverse gate dissipatio |
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RCA |
Thyristors |
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RCA |
Thyristors |
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RCA |
Thyristors o Low switching losses o High di/dt and dv/dt capabilities o Sh |
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RCA |
Thyristors o Fast turn ·off time -1511s max. o High di/dt and dv/dt capabilities o High peak.current capability o Shorted ·emitter gate.cathode construction o Forward and reverse gate dissipatio |
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RCA |
Power Transistors • Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max.) at Ic 15 A VBE (sat) = 1_80 V (max.) at IC = 15 A • High reliability and uniformity |
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RCA |
Power Transistors a Maximum-area-of-operation curves for de and pulse operation a Rated for safe operation in both forward- and reverse-bias conditions " High sustaining voltage a Total saturated transition time less than 1 p.s for 2N3879, 2N5202, and 2N6500 RCA-2N3 |
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RCA |
Thyristors " Fast turn-off time - 10 j1s max. CI Center gate construction ... provides " High di/dt and dv/dt capabilities rapid uniform gate-current spreading for " Shorted-emitter gate-cathode construction faster turn-on with substantially reduced ___ c |
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RCA |
Thyristors " Fast turn-off time - 10 j1s max. CI Center gate construction ... provides " High di/dt and dv/dt capabilities rapid uniform gate-current spreading for " Shorted-emitter gate-cathode construction faster turn-on with substantially reduced ___ c |
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RCA |
Thyristors o Fast turn ·off time -1511s max. o High di/dt and dv/dt capabilities o High peak.current capability o Shorted ·emitter gate.cathode construction o Forward and reverse gate dissipatio |
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RCA |
Power Transistors • Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max.) at Ic 15 A VBE (sat) = 1_80 V (max.) at IC = 15 A • High reliability and uniformity |
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RCA |
Power Transistors • Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max.) at Ic 15 A VBE (sat) = 1_80 V (max.) at IC = 15 A • High reliability and uniformity |
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RCA |
RF Power Transistors o high gain.bandwidth product fT = 900MHz typo • low noise figure NF = SdB typo at 470MHz 4.SdB max. at 200 MHz 2.Sd8 typo at 60MHz • high unneutrolized power gain Gpe = 11.Sd8 min. at 200MHz • hermetically sealed four-lead package • all active ele |
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RCA |
Power Transistors • Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max.) at Ic 15 A VBE (sat) = 1_80 V (max.) at IC = 15 A • High reliability and uniformity |
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RCA |
Thyristors |
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RCA |
Thyristors |
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RCA |
Thyristors o Fast turn ·off time -1511s max. o High di/dt and dv/dt capabilities o High peak.current capability o Shorted ·emitter gate.cathode construction o Forward and reverse gate dissipatio |
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RCA |
Thyristors o Low switching losses o High di/dt and dv/dt capabilities o Sh |
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