QT Optoelectronics QED fiche technique

No.	Partie #	Fabricant	Description
1	QED234	QT Optoelectronics	GAAS INFRARED EMITTING DIODE
2	QED122	QT Optoelectronics	PLASTIC INFRARED LIGHT EMITTING DIODE • != 880 nm REFERENCE SURFACE 0.305 (7.75) • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 0.040 (1.02) NOM 0.800 (20.3) MIN • Narrow Emission Angle, 18° • High Output Power • Package mate
3	QED123	QT Optoelectronics	PLASTIC INFRARED LIGHT EMITTING DIODE • != 880 nm REFERENCE SURFACE 0.305 (7.75) • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 0.040 (1.02) NOM 0.800 (20.3) MIN • Narrow Emission Angle, 18° • High Output Power • Package mate
4	QED222	QT Optoelectronics	AIGAAS INFRARED EMITTING DIODE
5	QED523	QT Optoelectronics	AIGAAS INFRARED EMITTING DIODE
6	QED121	QT Optoelectronics	PLASTIC INFRARED LIGHT EMITTING DIODE • != 880 nm REFERENCE SURFACE 0.305 (7.75) • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 0.040 (1.02) NOM 0.800 (20.3) MIN • Narrow Emission Angle, 18° • High Output Power • Package mate
7	QED221	QT Optoelectronics	AIGAAS INFRARED EMITTING DIODE
8	QED233	QT Optoelectronics	GAAS INFRARED EMITTING DIODE
9	QED422	QT Optoelectronics	AIGAAS INFRARED EMITTING DIODE
10	QED423	QT Optoelectronics	AIGAAS INFRARED EMITTING DIODE
11	QED522	QT Optoelectronics	AIGAAS INFRARED EMITTING DIODE