Prisemi PBA fiche technique

No.	Partie #	Fabricant	Description
1	PBAT54T	Prisemi	Schottky Barrier diode ¾ Low forward voltage ¾ Guard ring protected PBAT54T SERIES Schottky Barrier diode Applications ¾ Ultra high-speed switching ¾ Voltage clamping ¾ Protection circuits ¾ Blocking diodes. Mechanical Characteristics ¾ Lead finish:100% matte Sn(Tin) ¾ M
2	PBAT54ST	Prisemi	Schottky Barrier diode ¾ Low forward voltage ¾ Guard ring protected PBAT54T SERIES Schottky Barrier diode Applications ¾ Ultra high-speed switching ¾ Voltage clamping ¾ Protection circuits ¾ Blocking diodes. Mechanical Characteristics ¾ Lead finish:100% matte Sn(Tin) ¾ M
3	PBAT54CT	Prisemi	Schottky Barrier diode ¾ Low forward voltage ¾ Guard ring protected PBAT54T SERIES Schottky Barrier diode Applications ¾ Ultra high-speed switching ¾ Voltage clamping ¾ Protection circuits ¾ Blocking diodes. Mechanical Characteristics ¾ Lead finish:100% matte Sn(Tin) ¾ M
4	PBAT54AT	Prisemi	Schottky Barrier diode ¾ Low forward voltage ¾ Guard ring protected PBAT54T SERIES Schottky Barrier diode Applications ¾ Ultra high-speed switching ¾ Voltage clamping ¾ Protection circuits ¾ Blocking diodes. Mechanical Characteristics ¾ Lead finish:100% matte Sn(Tin) ¾ M
5	PBAR64	Prisemi	PIN diode ¾ High voltage current controlled RF resistor for RF attenuator and switches ¾ Frequency range above 1 MHz up to 6 GHz ¾ Very low capacitance at zero volt reverse bias at frequencies above 1 GHz ¾ Low forward resistance ¾ Very low signal distortion
6	PBAR64-03W	Prisemi	PIN diode ¾ High voltage current controlled RF resistor for RF attenuator and switches ¾ Frequency range above 1 MHz up to 6 GHz ¾ Very low capacitance at zero volt reverse bias at frequencies above 1 GHz ¾ Low forward resistance ¾ Very low signal distortion
7	PBAR64-04W	Prisemi	PIN diode ¾ High voltage current controlled RF resistor for RF attenuator and switches ¾ Frequency range above 1 MHz up to 6 GHz ¾ Very low capacitance at zero volt reverse bias at frequencies above 1 GHz ¾ Low forward resistance ¾ Very low signal distortion
8	PBAR64-05W	Prisemi	PIN diode ¾ High voltage current controlled RF resistor for RF attenuator and switches ¾ Frequency range above 1 MHz up to 6 GHz ¾ Very low capacitance at zero volt reverse bias at frequencies above 1 GHz ¾ Low forward resistance ¾ Very low signal distortion
9	PBAR64-06W	Prisemi	PIN diode ¾ High voltage current controlled RF resistor for RF attenuator and switches ¾ Frequency range above 1 MHz up to 6 GHz ¾ Very low capacitance at zero volt reverse bias at frequencies above 1 GHz ¾ Low forward resistance ¾ Very low signal distortion