Powerex QID fiche technique

No.	Partie #	Fabricant	Description
1	QID3330001	Powerex	Dual IGBT HVIGBT Module  -40 to 150°C Extended Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-u
2	QID3310006	Powerex	Dual IGBT HVIGBT Module  -40 to 150°C Extended Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-u
3	QID6508001	Powerex	Dual IGBT HVIGBT Module  -40 to 150°C Extended Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-u
4	QID3320002	Powerex	Dual IGBT HVIGBT Module  Advanced Mitsubishi R-Series Chip Technology  Low VCE(sat)  Creepage and Clearance meet IEC 60077-1  High Isolation Voltage  Rugged SWSOA and RRSOA  Compact Industry Standard Package Applications:  Medium Voltage Drives  High Vo
5	QID1210005	Powerex	Split Dual Si/SiC Hybrid IGBT Module £ Low ESW(off) £ Aluminum Nitride Isolation £ Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode £ Low Internal Inductance £ 2 Individual Switches per Module £ Isolated Baseplate for Easy Heat Sinking £ Copper Baseplate Appl
6	QID0640020	Powerex	IGBT Module £ AlSiC Baseplate £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell 04/10 Rev. 0 1
7	QID0630006	Powerex Power Semiconductors	Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts) ♦ Low Drive Power ♦ Low VCE(sat) ♦ Discrete Fast Recovery Free-Wheel Diode ♦ High Frequency Operation (2025kHz) ♦ Isolated Base plate for Easy Heat sinking ♦ Fully Hermetic Package ♦ Package Design Capable of Use at High Altitudes Schematic: Applic
8	QID3350001	Powerex	Dual IGBT HVIGBT Module  -55 to 150°C Extended Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  AlSiC Baseplate  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  C
9	QID3340001	Powerex	Dual IGBT HVIGBT Module  -55 to 150°C Extended Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  AlSiC Baseplate  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  C
10	QID4515002	Powerex	HVIGBT Module  Low VCE(sat)  Creepage and Clearance meet IEC 60077-1  High Isolation Voltage  Rugged SWSOA and RRSOA  Compact Industry Standard Package Applications:  Traction  Medium Voltage Drives  High Voltage Power Supplies 09/12 Rev. 9 1
11	QID3320004	Powerex	Dual IGBT HVIGBT Module  -40 to 150°C Extended Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-u
12	QID4515001	Powerex	HVIGBT Module  Low VCE(sat)  Creepage and Clearance meet IEC 60077-1  High Isolation Voltage  Rugged SWSOA and RRSOA  Compact Industry Standard Package Applications:  Traction  Medium Voltage Drives  High Voltage Power Supplies 09/12 Rev. 8 1
13	QID1210006	Powerex	Split Dual Si/SiC Hybrid IGBT Module £ Low ESW(off) £ Aluminum Nitride Isolation £ Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode £ Low Internal Inductance £ 2 Individual Switches per Module £ Isolated Baseplate for Easy Heat Sinking £ AlSiC Baseplate £ Ro
14	QID1230015	Powerex	IGBT Module £ AlSiC Baseplate £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell 04/10 Rev. 0 1
15	QID0660023	Powerex	Dual IGBT Module  Class H Hybrid Screened to MIL-PRF-38534 Requirements  Withstand HAST  Light Weight AlSiC Baseplate  Low Drive Requirement  Ultra-fast Free Wheeling Diode  Internal Zener Protection on Gates  High Side Collector Sense Pin for De-sat De