Powerex Power PP3 fiche technique

No.	Partie #	Fabricant	Description
1	PP300D060	Powerex Power	POW-R-PAK 300A / 600V Half Bridge IGBT Assembly state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The TM POW-R-PAK includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate dr
2	PP300D120	Powerex Power	POW-R-PAK 300A / 1200V Half Bridge IGBT Assembly state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The TM POW-R-PAK includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate dr
3	PP300T060	Powerex Power	POW-R-PAK 300A / 1200V Half Bridge IGBT Assembly state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The TM POW-R-PAK includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate dr
4	PP300B120	Powerex Power	POW-R-PAK 300A / 1200V H-Bridge IGBT Assembly state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The TM POW-R-PAK includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate dr
5	PP300T120	Powerex Power	POW-R-PAK 300A / 1200V 3 phase IGBT Assembly state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The TM POW-R-PAK includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate dr
6	PP300B060	Powerex Power	POW-R-PAK 300A / 600V H-Bridge IGBT Assembly state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The TM POW-R-PAK includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate dr