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PowerSemiconductors |
WATERCOOLEDA.C.SWITCH DUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cu |
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PowerSemiconductors |
WATERCOOLEDA.C.SWITCH ONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger |
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PowerSemiconductors |
WATERCOOLEDA.C.SWITCH ONDUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger |
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PowerSemiconductors |
WATERCOOLEDA.C.SWITCH DUCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cu |
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Power Semiconductors |
PHASE CONTROL THYRISTOR urrent = 2900 A 25 125 125 125 1965 1695 36 6480 x1E3 1.4 0.82 0.180 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min |
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Power Semiconductors |
PHASE CONTROL THYRISTOR current = 2900 A 125 125 125 125 1730 1495 36 6480 x1E3 1.6 0.90 0.240 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, m |
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Power Semiconductors |
PHASE CONTROL THYRISTOR current = 2900 A 125 125 125 125 1730 1495 36 6480 x1E3 1.6 0.90 0.240 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, m |
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Power Semiconductors |
PHASE CONTROL THYRISTOR current = 1570 A 25 120 120 120 840 705 10 500 x1E3 2.4 1.3 1.150 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current Critical rate of rise of off-state voltage, min. Gate co |
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Power Semiconductors |
PHASE CONTROL THYRISTOR urrent = 1000 A 25 125 125 125 720 630 8.8 387 x1E3 1.5 0.91 0.580 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. |
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Power Semiconductors |
PHASE CONTROL THYRISTOR urrent = 1000 A 25 125 125 125 605 530 8.4 353 x1E3 1.6 1.05 0.850 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. |
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Power Semiconductors |
PHASE CONTROL THYRISTOR rent = 6000 A 25 140 140 140 2585 2420 36 6480 x1E3 1.55 0.8 0.120 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. |
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Power Semiconductors |
PHASE CONTROL THYRISTOR urrent = 2900 A 25 125 125 125 1965 1695 36 6480 x1E3 1.4 0.82 0.180 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min |
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Power Semiconductors |
PHASE CONTROL THYRISTOR current = 2000 A 25 125 125 125 1085 945 13 845 x1E3 1.2 0.700 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gat |
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Power Semiconductors |
PHASE CONTROL THYRISTOR current = 1570 A 25 120 120 120 840 705 10 500 x1E3 2.4 1.3 1.150 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current Critical rate of rise of off-state voltage, min. Gate co |
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Power Semiconductors |
PHASE CONTROL THYRISTOR urrent = 2900 A 25 125 125 125 1545 1330 30 4500 x1E3 1.8 1.05 0.290 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min |
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