No. | Partie # | Fabricant | Description | Fiche Technique |
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PowerSemiconductors |
WATERCOOLEDA.C.SWITCH UCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cur |
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PowerSemiconductors |
WATERCOOLEDA.C.SWITCH UCTING I I V V r T(RMS) TSM I² t TM T(TO) T SWITCHING di/dt dv/dt Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. 125 125 200 500 A/µs V/µs GATE V I P GT GT GM Gate trigger voltage Gate trigger cur |
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Power Semiconductors |
PHASE CONTROL THYRISTOR out reverse voltage On-state current = 800 A 25 125 125 125 445 355 6.4 205 x1E3 1.45 0.9 0.680 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of ris |
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Power Semiconductors |
PHASE CONTROL THYRISTOR out reverse voltage On-state current = 800 A 25 125 125 125 445 355 6.4 205 x1E3 1.45 0.9 0.680 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of ris |
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Power Semiconductors |
PHASE CONTROL THYRISTOR out reverse voltage On-state current = 800 A 25 125 125 125 430 340 5.6 157 x1E3 1.55 1.0 0.680 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of ris |
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Power Semiconductors |
PHASE CONTROL THYRISTOR out reverse voltage On-state current = 800 A 25 125 125 125 430 340 5.6 157 x1E3 1.55 1.0 0.680 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of ris |
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