| No. | Partie # | Fabricant | Description | Fiche Technique |
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Power Semiconductors |
PHASE CONTROL THYRISTOR t = 1000 A 25 150 150 150 995 980 11.5 661 x1E3 1.25 0.8 0.450 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate |
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Power Semiconductors |
PHASE CONTROL THYRISTOR t = 1000 A 25 150 150 150 995 980 11.5 661 x1E3 1.25 0.8 0.450 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate |
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Power Semiconductors |
PHASE CONTROL THYRISTOR nt = 1900 A 25 150 150 150 1100 1085 12 720 x1E3 1.45 0.8 0.340 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gat |
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Power Semiconductors |
PHASE CONTROL THYRISTOR nt = 1900 A 25 150 150 150 1100 1085 12 720 x1E3 1.45 0.8 0.340 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gat |
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Power Semiconductors |
PHASE CONTROL THYRISTOR urrent = 1650 A 25 125 125 125 660 580 7.5 281 x1E3 2.16 0.95 0.720 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. |
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Power Semiconductors |
PHASE CONTROL THYRISTOR urrent = 1650 A 25 125 125 125 660 580 7.5 281 x1E3 2.16 0.95 0.720 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. |
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