| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 190 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounti |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 190 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounti |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 190 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounti |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 190 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounti |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 175 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 175 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating j |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating j |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating juncti |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 3500 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current I= 1600 A di/dt= 2A/µs 150 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating juncti |
|