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Power Innovations Limited |
NPN SILICON POWER TRANSISTORS 5 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing doe |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -65 to +150 -65 to +150 250 |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -65 to +150 -65 to +150 250 |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -65 to +150 -65 to +150 250 |
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Power Innovations Limited |
NPN SILICON POWER DARLINGTONS 10 seconds NOTES: 1. 2. 3. 4. TIP131 TIP132 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 8 12 0.3 70 2 75 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, du |
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Power Innovations Limited |
PNP SILICON POWER DARLINGTONS e for 10 seconds NOTES: 1. 2. 3. 4. TIP146 TIP147 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -60 -80 -100 -60 -80 -100 -5 -10 -15 -0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applie |
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Power Innovations Limited |
PNP SILICON POWER DARLINGTONS e for 10 seconds NOTES: 1. 2. 3. 4. TIP146 TIP147 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -60 -80 -100 -60 -80 -100 -5 -10 -15 -0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applie |
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Power Innovations Limited |
NPN SILICON POWER DARLINGTONS mperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP161 TIP162 V EBO IC ICM IEM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE 320 350 380 320 350 380 5 10 15 10 1 50 3 -65 to +150 -65 to +150 260 V A A A A W W °C °C °C V V UNIT This val |
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Power Innovations Limited |
NPN SILICON POWER DARLINGTONS ase for 10 seconds NOTES: 1. 2. 3. 4. TIP101 TIP102 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 8 15 1 80 2 10 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 |
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Power Innovations Limited |
PNP SILICON POWER DARLINGTONS e for 10 seconds NOTES: 1. 2. 3. 4. TIP146 TIP147 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -60 -80 -100 -60 -80 -100 -5 -10 -15 -0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applie |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTOR t Ptot ½LIC 2 Tj Tstg TL VALUE -100 -70 -7 -15 -7 90 3.5 62.5 -65 to +150 -65 to +150 260 UNIT V V V A A W W mJ °C °C °C This value applies when the base-emitter resistance RBE = 100 Ω. Derate linearly to 150°C case temperature at the rate of 0.72 W |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS age temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -1 -3 -0.4 30 2 32 -65 to +150 -65 to +150 250 V A A A |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS torage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -10 -15 -3 80 3.5 62.5 -65 to +150 -65 to +150 250 |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS torage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -10 -15 -3 80 3.5 62.5 -65 to +150 -65 to +150 250 |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS torage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -10 -15 -3 80 3.5 62.5 -65 to +150 -65 to +150 250 |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -65 to +150 -65 to +150 250 |
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Power Innovations Limited |
NPN SILICON POWER DARLINGTONS ase for 10 seconds NOTES: 1. 2. 3. 4. TIP101 TIP102 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 8 15 1 80 2 10 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 |
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Power Innovations Limited |
PNP SILICON POWER DARLINGTONS ase for 10 seconds NOTES: 1. 2. 3. 4. TIP106 TIP107 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -60 -80 -100 -60 -80 -100 -5 -8 -15 -1 80 2 10 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for |
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Power Innovations Limited |
NPN SILICON POWER DARLINGTONS or 10 seconds NOTES: 1. 2. 3. 4. TIP111 TIP112 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 4 6 50 50 2 25 -65 to +150 -65 to +150 260 V A A mA W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, |
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Power Innovations Limited |
NPN SILICON POWER DARLINGTONS or 10 seconds NOTES: 1. 2. 3. 4. TIP111 TIP112 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 4 6 50 50 2 25 -65 to +150 -65 to +150 260 V A A mA W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, |
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