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Power Innovations Limited |
SILICON TRIACS conds IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 6 60 70 ±1 2.2 0.9 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate |
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Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS ture range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V V UNIT NOTES: 1. |
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Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V V UNI |
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Power Innovations Limited |
SILICON TRIACS seconds IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 8 70 80 ±1 2.2 0.9 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gat |
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Power Innovations Limited |
SILICON TRIACS between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave whe |
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Power Innovations Limited |
SILICON TRIACS between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave whe |
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Power Innovations Limited |
SILICON TRIACS ween the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when th |
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Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS VRRM IT(RMS) ITSM IGM PG(AV) TC Tstg TL VALUE 400 600 400 600 2 15 0.2 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operat |
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Power Innovations Limited |
SILICON TRIACS IGM P G(AV) TC Tstg TL VALUE 400 600 1.5 10 12 ±0.2 0.3 -40 to +110 -40 to +125 230 UNIT V A A A A W °C °C °C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 5 |
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Power Innovations Limited |
SILICON TRIACS f resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 300 mA/°C. 3. This value applies for one 50-Hz full-s |
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Power Innovations Limited |
SILICON TRIACS ionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C. 3. This value appli |
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Power Innovations Limited |
SILICON TRIACS ionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C. 3. This value appli |
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Power Innovations Limited |
SILICON TRIACS between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave whe |
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Power Innovations Limited |
SILICON TRIACS ween the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when th |
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Power Innovations Limited |
SILICON TRIACS ween the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when th |
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Power Innovations Limited |
SILICON TRIACS ween the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when th |
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Power Innovations Limited |
SILICON TRIACS ween the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when th |
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Power Innovations Limited |
SILICON TRIACS between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 625 mA/°C. 3. This value applies for one 50-Hz full-sine-wave whe |
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Power Innovations Limited |
SILICON TRIACS ween the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 50°C derate linearly to 110°C case temperature at the rate of 625 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when th |
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Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS VRRM IT(RMS) ITSM IGM PG(AV) TC Tstg TL VALUE 400 600 400 600 2 15 0.2 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operat |
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