| No. | Partie # | Fabricant | Description | Fiche Technique |
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Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH G |
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