| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 8.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAI |
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Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GA |
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