| No. | Partie # | Fabricant | Description | Fiche Technique |
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Philips |
Satellite and cellular dual-band RF front-end • Low current consumption • Outstanding low- and high-band noise figure • Excellent gain stability versus temperature and supply • Image reject high-band mixer with over 30 dB of rejection • Increased low-band LNA gain compression during analog • LO |
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Philips |
Low voltage GSM front-end transceiver • Excellent noise figure: <2dB for the LNAs at 950MHz • LNAs matched to 50Ω with external matching components • LNAs with gain control, 59dB dynamic range in four discrete steps • LNA gain stability ±0.5dB within -40 to 85°C PIN CONFIGURATION • 900 |
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Philips |
Dual-band RF front-end • Low current consumption • Outstanding low- and high-band noise figure • Excellent gain stability versus temperature and supply • Image reject high-band mixer with over 30 dB of rejection • Increased low-band LNA gain compression during analog • LO |
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Philips |
NPN Darlington transistor • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • High gain amplification. handbook, halfpage MPSA14 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 1 DESCRIPTION NPN Darlington tran |
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Philips |
General purpose operational amplifier • Internal frequency compensation • Short-circuit protection • Excellent temperature stability • High input voltage range • No latch-up • 1558/1458 are 2 “op amps” in space of one 741 package ORDERING INFORMATION DESCRIPTION 8-Pin Plastic Small Outl |
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Philips |
General purpose operational amplifier • Internal frequency compensation • Short-circuit protection • Excellent temperature stability • High input voltage range • No latch-up • 1558/1458 are 2 “op amps” in space of one 741 package ORDERING INFORMATION DESCRIPTION 8-Pin Plastic Small Outl |
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Philips |
General purpose operational amplifier • Internal frequency compensation • Short-circuit protection • Excellent temperature stability • High input voltage range • No latch-up • 1558/1458 are 2 “op amps” in space of one 741 package ORDERING INFORMATION DESCRIPTION 8-Pin Plastic Small Outl |
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Philips |
Low voltage GSM front-end transceiver • Excellent noise figure: <2dB for the LNAs at 950MHz • LNAs matched to 50Ω with external matching components • LNAs with gain control, 59dB dynamic range in four discrete steps • LNA gain stability ±0.5dB within -40 to 85°C PIN CONFIGURATION • 900 |
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Philips |
IF quadrature transceiver • Low supply voltage operation of 2.7V for main chip and 2.9V for charge pump. • Digital gain control of 70 dB in steps of 2 dB. • Rx Baseband amplifiers are capable of driving 1kW ||15pF • Rx Baseband o/p’s clamp symmetrically, above 1Vp –p in orde |
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Philips |
IF quadrature transceiver • Low supply voltage operation of 2.7V for main chip and 2.9V for charge pump. • Digital gain control of 70 dB in steps of 2 dB. • Rx Baseband amplifiers are capable of driving 1kW ||15pF • Rx Baseband o/p’s clamp symmetrically, above 1Vp –p in orde |
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Philips |
Low voltage IF I/Q transceiver • Fully compatible with SA1620 GSM RF front-end (see Figure 9) APPLICATIONS • Direct supply: 3.3V to 7.5V • Two DC regulators giving 3.0V output • Low current consumption: 18mA for Rx or 22mA for Tx • Input/output IF frequency from 70-400 MHz • Int |
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Philips |
Low voltage IF I/Q transceiver • Fully compatible with SA1620 GSM RF front-end (see Figure 9) APPLICATIONS • Direct supply: 3.3V to 7.5V • Two DC regulators giving 3.0V output • Low current consumption: 18mA for Rx or 22mA for Tx • Input/output IF frequency from 70-400 MHz • Int |
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